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High Dynamic Range FET
FH101
The Communications Edge TM
Product Information
Product Features * 50-3000 MHz Bandwidth * +36 dBm Output IP3 * 1.2 dB Noise Figure * 18 dB Gain * +18 dBm P1dB * Single or Dual Supply Operation * MTBF >100 Years * SOT-89 SMT Package
Actual Size
Product Description
The FH101 is a high dynamic range FET packaged in a low cost surface mount package. The device is available in both the standard SOT-89 package and the environmentally friendly lead-free and "green" SOT-89 package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The FH101 achieves +36 dBm OIP3 at a mounting temperature of 85C with an associated MTBF of >100 years. The package is a SOT89. All devices are 100% RF and DC tested. The product is targeted for applications where high linearity is required.
Functional Diagram
4
1
2
3
Function Gate Source Drain Source
Pin No. 1 2 3 4
Specifications
DC Electrical Parameter Units Saturated Drain Current, Idss mA Transconductance, Gm Pinch Off Voltage, Vp RF Parameter Small Signal Gain, Gss Max Stable Gain, Gmsg Output IP3 Output P1dB Noise Figure, NF
7
Typical Parameters
Min. 100 -3.0 Min. 17 32 Typical Max. 140 120 -1.5 Typical Max. 18 23 36 18 1.2 170 Parameter Frequency S21 S11 S22 Output IP3 Output P1dB Noise Figure Drain Bias Supply Gate Bias Units MHz dB dB dB dBm dBm dB 900 19.0 -10.7 -9.7 +38.0 +18.8 2.7 5 V @ 140 mA 0V Typical 1900 16.0 -12.3 -17.2 +33.6 +19.1 3.1
mS V Units dB dB dBm dBm dB
Typical parameters reflect performance in an application circuit.
Notes: 1. DC and RF parameters measured under the following conditions unless otherwise noted. 25C with Vds = 5.0 V, Vgs = 0 V, test frequency = 800 MHz, 50 W system. 2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule. 3. Device needs appropriate match to become unconditionally stable. 4. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40C is +36 dBm. 5. Idss is measured with Vgs = 0 V. 6. Pinch off voltage is measured when Ids = 0.6 mA. 7. Measured with Vds = 3.3 V, 50% Idss.
Absolute Maximum Ratings
Parameter Drain to Source Voltage Gate to Source Voltage Gate Current Operating Case Temperature Storage Temperature Input RF Power (continuous) Rating +6.0 V -6.0 V 4.5 mA -40 to +85C -55 to +125C +10 dBm
Ordering Information
Part No. FH101 FH101-G Description High Dynamic Range FET (leaded)1 High Dynamic Range FET (lead-free)2
1 Product may contain lead-bearing materials. Maximum +235C reflow temperature. 2 Product does not contain lead-bearing materials. Maximum +260C reflow temperature. Also compatible with leaded soldering process.
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc. * Phone: 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com
April 2004
High Dynamic Range FET
FH101
The Communications Edge TM
Product Information
OIP3 vs. Frequency
50 40 OIP3 (dBm) 30 20 10 0 0 3.3V 50% Idss 5V 100% Idss 23 21 19 Gain(dB) 17 15 13 11 .5 1 1.5 2 Frequency (GHz) 2.5 3 0 .5
Gain vs. Temperature
5 4 NF (dB) 3
NF vs. Frequency
Gain at +22C
Gain at -40C
5V, 100% Idss 2 1
Gain at +85C 5V, 100% Idss 0 1 1.5 2 2.5 3 Frequency (GHz) 0 .5 1 3.3V 50% Idss 1.5 2 2.5 3
Frequency (GHz)
OIP3 vs. Temperature
50 50
OIP3 vs. Power Out
S-Parameters
OIP3 (dBm)
45 OIP3 (dBm)
45
40 35 30 -40 -20 0 20 40 60 80 100 Temperature (C) 5V, 100% Idss
40 2.05 35 30 0 2 4 6 8 10 12 14 16 18 S11 Output Power (dBm) 0.05 2.05 S22 0.05
S11 and S22
Thermal Specifications
Parameter Operating Case Temperature Thermal Resistance (Maximum) Junction Temperature (Recommended Maximum) Rating
MTBF (hours)
109 108 107 106 105 50
MTBF vs. Temperature
-40 to +85C 59C/W +160C
Ground Tab
Junction
Notes: 1. Thermal Resistance determined at Maximum Tab Temperature and Maximum Power Dissipation. 2. Recommended Maximum Junction Temperature insures a MTBF of 1 million hours.
75
100 125 150 Temperature (C)
175
200
Specifications and information are subject to change without notice.
WJ Communications, Inc. * Phone: 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com
April 2004
High Dynamic Range FET
FH101
The Communications Edge TM
Product Information
Outline Drawing
ESD / MSL Information
ESD Classification: Value: Test: Standard: ESD Classification: Value: Test: Standard: FH101 MSL Rating: Standard: FH101-G MSL Rating: Standard: Class 1B Passes at 600 V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes at 1000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 Level 3 at +225C convection reflow JEDEC Standard J-STD-020 Level 3 at +260C convection reflow JEDEC Standard J-STD-020
XXXX XXXX-X
1
'XXXX' = Part Designation = 'FH1' for FH101 'XXXX' = Part Designation = 'FH1G' for FH101-G '1' = Lasermark 'XXXX-X' = Lot Code
Land Pattern
Mounting Configuration
Specifications and information are subject to change without notice.
WJ Communications, Inc. * Phone: 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com
April 2004
High Dynamic Range FET
FH101
The Communications Edge TM
Product Information
Typical Test Data
S-Parameters (Vds = +5 V, 100% Idss, T = 22C, de-embedded into package device in a 50 ohm system)
Freq (GHz) S11 (Mag) S11 (Ang) S21 (dB) S21 (Mag) S21 (Ang) S12 (Mag) S12 (Ang) S22 (Mag) S22 (Ang) K Value
0.05 0.30 0.55 0.80 1.05 1.30 1.55 1.80 2.05 2.30 2.55 2.80 3.05
0.997 0.993 0.968 0.928 0.905 0.868 0.841 0.815 0.780 0.766 0.754 0.754 0.748
-3.940 -22.800 -42.900 -62.100 -79.100 -95.800 -111.000 -126.000 -142.000 -155.000 -168.000 -180.000 169.000
19.789 19.370 19.133 18.639 18.116 17.478 16.852 16.191 15.519 14.901 14.253 13.679 13.103
9.760 9.300 9.050 8.550 8.050 7.480 6.960 6.450 5.970 5.560 5.160 4.830 4.520
175.000 162.000 147.000 133.000 121.000 109.000 97.500 86.900 76.800 67.300 58.300 49.600 41.200
0.002 0.015 0.027 0.037 0.046 0.053 0.059 0.063 0.068 0.071 0.073 0.074 0.075
97.900 76.000 66.100 54.400 45.800 35.500 27.400 20.100 13.400 6.700 0.425 -5.810 -12.300
0.502 0.492 0.455 0.424 0.398 0.361 0.329 0.308 0.296 0.268 0.240 0.216 0.191
-6.360 -15.200 -26.300 -36.400 -47.300 -56.700 -66.400 -75.000 -81.500 -89.400 -96.100 -103.000 -110.000
0.0004 0.0570 0.1303 0.2302 0.2490 0.3267 0.3761 0.4231 0.4842 0.5293 0.5844 0.6190 0.6719
S-Parameters (Vds = +3.3 V, 50% Idss, T = 22C, de-embedded into package device in a 50 ohm system)
Freq (GHz) S11 (Mag) S11 (Ang) S21 (dB) S21 (Mag) S21 (Ang) S12 (Mag) S12 (Ang) S22 (Mag) S22 (Ang) K Value
0.05 0.30 0.55 0.80 1.05 1.30 1.55 1.80 2.05 2.30 2.55 2.80 3.05
0.998 0.994 0.973 0.935 0.915 0.880 0.853 0.826 0.788 0.772 0.757 0.755 0.747
-3.580 -21.200 -39.900 -58.000 -74.200 -90.300 -105.000 -120.000 -136.000 -150.000 -163.000 -175.000 174.000
18.900 18.700 18.547 18.105 17.696 17.122 16.547 15.959 15.402 14.807 14.185 13.625 13.064
8.810 8.610 8.460 8.040 7.670 7.180 6.720 6.280 5.890 5.500 5.120 4.800 4.500
176.000 163.000 149.000 136.000 123.000 112.000 100.000 89.900 79.700 70.000 60.800 52.000 43.400
0.002 0.016 0.030 0.042 0.052 0.061 0.068 0.073 0.080 0.083 0.087 0.089 0.090
105.000 78.500 66.900 55.800 46.900 37.200 28.700 20.800 14.000 6.160 -0.455 -6.810 -13.400
0.387 0.392 0.360 0.337 0.317 0.285 0.259 0.250 0.236 0.215 0.189 0.169 0.150
-3.780 -16.300 -29.600 -42.100 -55.600 -67.900 -81.000 -93.100 -102.000 -115.000 -126.000 -138.000 -152.000
-0.0299 0.0449 0.1249 0.2164 0.2394 0.3035 0.3513 0.3876 0.4513 0.4923 0.5445 0.5746 0.6242
Specifications and information are subject to change without notice.
WJ Communications, Inc. * Phone: 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com
April 2004

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